Integrated planar waveguide demultiplexers for high-density WDM applicationsKOTELES, E. S.Fiber and integrated optics. 1999, Vol 18, Num 4, pp 211-244, issn 0146-8030Article

Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laserSHARFIN, W. F; SCHLAFER, J; KOTELES, E. S et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 8, pp 1709-1712, issn 0018-9197Article

Experimental exciton binding energies in GaAs/Al_xGa_1-xAs quantum wells as a function of well widthKOTELES, E. S; CHI, J. Y.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6332-6335, issn 0163-1829Article

Electric field induced exciton binding in a GaAs/AlGaAs quantum wellCHEN, Y. J; ELMAN, B; KOTELES, E. S et al.Solid state communications. 1989, Vol 72, Num 1, pp 25-29, issn 0038-1098Article

Luminescence linewidths of excitons in GaAs quantum wells below 150KLEE, J; KOTELES, E. S; VASSELL, M. O et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5512-5516, issn 0163-1829Article

Mixing of valence subbands in GaAs/Al_xGa_1-xAs multiple quantum wells by uniaxial stressLEE, J; JAGANNATH, C; VASSELL, M. O et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 8, pp 4164-4170, issn 0163-1829Article

Difference phonon scattering : a Raman excitation in GaAs quantum wellsLIU, Y; SOORYAKUMAR, R; KOTELES, E. S et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6832-6835, issn 0163-1829, 4 p.Article

Spatially selective modification of GaAs/AlGaAs quantum wells by SiO₂ capping and rapid thermal annealingCHI, J. Y; WEN, X; KOTELES, E. S et al.Applied physics letters. 1989, Vol 55, Num 9, pp 855-857, issn 0003-6951, 3 p.Article

Triply resonant Raman scattering via nonequilibrium phonons in GaAs quamtum wellsLIU, Y; SOORYAKUMAR, R; KOTELES, E. S et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 12, pp 6769-6775, issn 0163-1829Article

Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealingCHI, J. Y; KOTELES, E. S; HOLMSTROM, R. P et al.Applied physics letters. 1988, Vol 53, Num 22, pp 2185-2187, issn 0003-6951Article

InGaAs/GaAs strained quantum wells with a 1.3 υm band edge at room temperatureMELMAN, P; ELMAN, B; JAGANNATH, C et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1436-1438, issn 0003-6951Article

Resonant surface enhanced Raman scattering by ultra thin Langmuir-Blodgett polydiacetylene polymer filmsCHEN, Y. J; TRIPATHY, S. K; CARTER, G. M et al.Solid state communications. 1986, Vol 58, Num 2, pp 97-100, issn 0038-1098Article

Influence of elastic scattering from neutral impurities on the exciton-polariton photoluminescence lineshape in GaAsLEE, J; KOTELES, E. S; VASSELL, M. O et al.Journal of luminescence. 1985, Vol 34, Num 1-2, pp 63-75, issn 0022-2313Article

Elastic scattering of exciton polaritons by neutral impuritiesKOTELES, E. S; LEE, J; SALERNO, J. P et al.Physical review letters. 1985, Vol 55, Num 8, pp 867-870, issn 0031-9007Article

GaAs₁-_xP_x/GaAs quantum-well structures with tensile-strained barriersAGAHI, F; LAU, K. M; KOTELES, E. S et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 459-465, issn 0018-9197Article

Modification of the coupling of double quantum wells through band structure changes under hydrostatic pressureBURNETT, J. H; CHEONG, H. M; PAUL, W et al.Superlattices and microstructures. 1989, Vol 6, Num 2, pp 167-170, issn 0749-6036, 4 p.Article

Optical investigation of biexcitons and bound excitons in GaAs quantum wellsCHARBONNEAU, S; STEINER, T; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 3583-3586, issn 0163-1829Article

Saturation of light- and heavy-hole exciton energies in very narrow quantum wellsKOTELES, E. S; OWENS, D. A; BERTOLET, D. C et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10139-10141, issn 0163-1829Article

Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixingHAYSOM, J. E; DELAGE, A; HE, J.-J et al.IEEE journal of quantum electronics. 1999, Vol 35, Num 9, pp 1354-1363, issn 0018-9197Article

Integrated planar waveguide demultiplexers for high density WDM applicationsKOTELES, E. S.Critical reviews of optical science and technology. 1999, pp 3-32, issn 1018-1997, isbn 0-8194-3104-4Conference Paper

Magneto-optical properties of biaxially strained quantum wellsVINA, L; MUNOZ, L; MESTRES, N et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1994, Vol 70, Num 3, pp 397-408, issn 0958-6644Article

The enhancement of quantum well intermixing through repeated ion implantationPOOLE, P. J; PIVA, P. G; BUCHANAN, M et al.Semiconductor science and technology. 1994, Vol 9, Num 11, pp 2134-2137, issn 0268-1242Article

Metal-semiconductor-metal demultiplexing waveguide photodetectors in InGaAs/GaAs quantum well structures by selective bandgap tuningMASUM CHOUDHURY, A. N. M; MELMAN, P; SILLETTI, A et al.IEEE Photonics technology letters. 1991, Vol 3, Num 9, pp 817-820Article

Evidence for asymmetric well shapes in post-growth modified GaAs/AlGaAs quantum wellsKOTELES, E. S; ELMAN, B; ARMIENTO, C. A et al.Journal of applied physics. 1989, Vol 66, Num 11, pp 5532-5535, issn 0021-8979Article

Temperature-dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growthKOTELES, E. S; ELMAN, B. S; JAGANNATH, C et al.Applied physics letters. 1986, Vol 49, Num 21, pp 1465-1467, issn 0003-6951Article